2009-10-01 1 BG5120K 1 6 2 3 5 4 dual n-channel mosfet tetrode ? low noise gain controlled input stages for uhf and vhf -tuners e. g. (ntsc, pal) ? two agc amplifiers in one single package ? integrated gate protection diodes ? low noise figure, high agc-range ? improved cross modulation at gain reduction ? pb-free (rohs compliant) package ? qualified according aec q101 BG5120K g2 g1 gnd agc rf input drain rf output + dc vgg rg1 1 23 4 5 6 a b esd ( e lectro s tatic d ischarge) sensitive device, observe handling precaution! type package pin configuration marking BG5120K sot363 1=g1* 2=g2 3=g1** 4=d** 5=s 6=d* k1 * for amp. a; ** for amp. b 180 rotated tape loading orientation available maximum ratings parameter symbol value unit drain-source voltage v ds 8 v continuous drain current i d 20 ma gate 1/ gate 2-source current i g1/2sm 1 gate 1/ gate 2-source voltage v g1/g2s 6 v total power dissipation p tot 200 mw storage temperature t stg -55 ... 150 c channel temperature t ch 150
2009-10-01 2 BG5120K thermal resistance parameter symbol value unit channel - soldering point 1) r thchs 280 k/w 1 for calculation of r thja please refer to application note thermal resistance electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. dc characteristics drain-source breakdown voltage i d = 10 a, v g1s = 0 , v g2s = 0 v (br)ds 12 - - v gate1-source breakdown voltage + i g1s = 10 ma, v g2s = 0 , v ds = 0 + v (br)g1ss 6 - 15 gate2-source breakdown voltage + i g2s = 10 ma, v g1s = 0 , v ds = 0 + v (br)g2ss 6 - 15 gate1-source leakage current v g1s = 6 v, v g2s = 0 , v ds = 0 + i g1ss - - 50 a gate2-source leakage current v g2s = 6 v, v g1s = 0 , v ds = 0 + i g2ss - - 50 na drain current v ds = 5 v, v g1s = 0 , v g2s = 4 v i dss - - 10 a drain-source current v ds = 5 v, v g2s = 4 v, r g1 = 100 k ? i dsx - 12 - ma gate1-source pinch-off voltage v ds = 5 v, v g2s = 4 v, i d = 20 a v g1s(p) - 0.7 - v gate2-source pinch-off voltage v ds = 5 v, i d = 20 a, v g1s = 2 v v g2s(p) - 0.6 -
2009-10-01 3 BG5120K electrical characteristics at t a = 25c, unless otherwise specified parameter symbol values unit min. typ. max. ac characteristics v ds = 5v , v g2s =4v, ( i d =10ma) (verified by random sampling) forward transconductance g fs - 30 - ms gate1 input capacitance f = 10 mhz c g1ss - 2.2 - pf output capacitance f = 10 mhz c dss - 1.4 - power gain 800 mhz 45 mhz g p - - 23 30 - - db noise figure 800 mhz 45 mhz , 45 mhz f - - 1.1 0.7 - - db gain control range v g2s = 4 ... 0 v, f = 800 mhz ? g p 45 - - cross-modulation k = 1%, f w = 50mhz, f unw = 60mhz agc = 0 db agc = 10 db agc = 40 db x mod 90 - 96 - 87 100 - - - dbv
2009-10-01 4 BG5120K total power dissipation p tot = ? ( t s ) 0 20 40 60 80 100 120 c 150 t s 0 50 100 150 200 mw 300 p tot drain current i d = ? ( i g1 ) v g2s = 4v -1 1 3 5 7 9 11 a 14 i g1 0 2 4 6 8 10 12 14 16 18 20 22 24 ma 30 i d output characteristics i d = ? ( v ds ) 0 1 2 3 4 5 6 7 v 9 v d 0 1 2 3 4 5 6 7 8 9 10 11 12 ma 15 i d 1.1v 1.2v 1.3v 1.4v gate 1 current i g1 = ? ( v g1s ) v ds = 5v v g2s = parameter 0 0.5 1 1.5 v 2.5 v g 1 0 10 20 30 40 50 60 70 a 90 i g1 4.0v 3.0v 2.0v 2.5v
2009-10-01 5 BG5120K gate 1 forward transconductance g fs = ? ( i d ) v ds = 5v, v g2s = parameter 0 2 4 6 8 10 12 14 16 ma 20 i d 0 5 10 15 20 25 30 ms 40 g fs 4.0 v 3.0 v 2.0 v 1.5 v drain current i d = ? ( v g1s ) v ds = 5v v g2s = parameter 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 v 2 v g 1 0 1 2 3 4 5 6 7 8 9 10 11 12 ma 14 i d 4.0v 2.0v 1.5v 1.0v drain current i d = ? ( v gg ) v ds = 5v, v g2s = 4v r g1 = parameter in k ? 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v gg =v ds 0 2 4 6 8 10 12 14 16 ma 20 i d 82 k 100 k 120 k 150 k drain current i d = ? ( v gg ) v ds = 5v, v g2s = 4v, r g1 = 150k ? (connected to v gg , v gg =gate1 supply voltage) 0 0.5 1 1.5 2 2.5 3 3.5 4 v 5 v gg 0 1 2 3 4 5 6 7 8 9 10 ma 12 i d
2009-10-01 6 BG5120K power gain g ps = ? ( v g2s ) f = 45mhz 0 0.5 1 1.5 2 2.5 3 v 4 v g2 -20 -15 -10 -5 0 5 10 15 20 25 db 35 g ps noise figure f = ? ( v g2s ) f =45mhz 0 1 2 v 4 v g2 0 1 2 db 4 f power gain g ps = ? ( v g2s ) f = 800 ghz 0 0.5 1 1.5 2 2.5 3 v 4 v g2 -20 -15 -10 -5 0 5 10 15 db 25 g ps noise figure f = ? ( v g2s ) f =800mhz 0 1 2 v 4 v g2 0 1 2 db 4 f
2009-10-01 7 BG5120K agc characteristic agc = ? ( v g2s ) v ds = 5 v, r gg = 120 k ? , f = 45 mhz 0 0.5 1 1.5 2 2.5 3 v 4 v g2s 0 5 10 15 20 25 30 35 40 45 db 55 agc agc characteristic agc = ? ( v g2s ) v ds = 5 v, r gg = 120 k ? , f = 800 mhz 0 0.5 1 1.5 2 2.5 3 v 4 v g2s 0 5 10 15 20 25 30 35 40 db 50 agc crossmodulation v unw = ( agc ) v ds = 5 v, i d = 14 ma 0 5 10 15 20 25 30 35 40 db 50 agc 85 90 95 100 105 dbv 115 v unw
2009-10-01 8 BG5120K crossmodulation test circuit rg1 4n7 4n7 rl 50 ? 50 ? r gen 50 ? v gg r1 10k ? v agc v ds 4n7 4n7 2.2 uh semibiased
2009-10-01 9 BG5120K p ackage sot363 package outline foot print marking layout (example) standard packing reel ?180 mm = 3.000 pieces/reel reel ?330 mm = 10.000 pieces/reel for symmetric types no defined pin 1 orientation in reel. small variations in positioning of date code, type code and manufacture are possible. manufacturer 2005, june date code (year/month) bcr108s type code pin 1 marking laser marking 0.3 0.7 0.9 0.65 0.65 1.6 0.2 4 2.15 1.1 8 2.3 pin 1 marking +0.1 0.2 1 6 23 5 4 0.2 2 +0.1 -0.05 0.15 0.1 1.25 0.1 max. 0.9 0.1 a -0.05 6x 0.1 m 0.65 0.65 2.1 0.1 0.1 0.1 min. m 0.2 a pin 1 marking
2009-10-01 10 BG5120K edition 2006-02-01 published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2007. all rights reserved. attention please! the information given in this dokument shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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